TPC8107 – Vdss=-30V, P-ch, MOSFET – Toshiba

Part number : TPC8107

Functions : Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Package information : SOP 8 Pin type

Manufacturer : Toshiba Semiconductor

Image

tpc8107-mosfet

Features

1. Small footprint due to small and thin package
2. Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
3. High forward transfer admittance: |Yfs| = 31 S (typ.)
4. Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
5. Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

 

Pinout

tpc8107-datasheet-pinout

Applications

1. Lithium Ion Battery Applications
2. Notebook PC Applications
3. Portable Equipment Applications

 

Maximum Ratings (Ta = 25°C)

1. Drain-source voltage : VDSS = -30 V
2. Drain-gate voltage (RGS  20 k) : VDGR = -30 V
3. Gate-source voltage : VGSS = +-20 V
4.  Drain power dissipation (t  10 s) : PD = 1.9 W

 

TPC8107 Datasheet PDF

 



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