3DD5011 Transistor – 900V, 10A, NPN, D5011

The 3DD5011 is a specific transistor that has a maximum voltage rating of 900V and a maximum current rating of 10A. It is commonly used in high-power applications where high voltage and current capabilities are required.

Part number : 3DD5011

Marking : D5011

Functions : CASE-RATED BIPOLAR NPN TRANSISTOR

Package information : TO-3P(H)IS Type

Manufacturer :  Jilin Sino Microelectronics

Image :
3DD5011 transistor Equivalent

Description

3DD5011 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture high voltage planar technology, triple diffused process etc., adoption of fully plastic packge. RoHS product.

Pinout

3DD5011 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Base Voltage : Vcbo = 900 V

2. Collector to Emitter Voltage : Vceo = 600 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 10 A

5. Total Dissipation : Pc = 5 A

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Appplications

Switching power supply for color TV.

 

3DD5011 Datasheet PDF

3DD5011 pdf

 

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D669A Transistor – NPN, 160V, 1.5A ( 2SD669A )

D669A transistor learn more.

Part number : 2SD669A

Functions : NPN Epitaxial Silicon Transistor

Package information : TO-126MOD Package

Manufacturer : Hitachi

Image

D669A transistor

Description

D669A transistor typically has a maximum collector-base voltage (Vcbo) of 180V, a maximum collector-emitter voltage (Vceo) of 160V, and a maximum emitter-base voltage (Vebo) of 5V. The maximum collector current (Ic) is 1.5A.

The 2SD669A transistor is an NPN (Negative-Positive-Negative) type transistor commonly used in various electronic applications. It is designed to handle medium to high voltage and current levels.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 180 V

2. Collector to emitter voltage : VCEO = 160 V

3. Emitter to base voltage : VEBO 5 V

4. Collector current IC : 1.5 A

5. Collector peak current : IC(peak) = 3 A

6. Collector power dissipation : PC 1 W

7. Junction temperature : Tj =  150 °C

8. Storage temperature : Tstg = –55 to +150 °C

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Pinout

D669A pinout datasheet

 

Applications

1. Low frequency power amplifier complementary pair with 2SB649/A

D669A Transistor PDF

D669A