RJP63K2 PDF – 630V, 35A, IGBT – Renesas

RJP63K2 IGBT is a semiconductor device used in high-voltage and high-current applications.

Part number : RJP63K2DPK-M0

Functions : 630V, 35A, Silicon N Channel IGBT

Package : TO-220FL Type

Manufacturer : Renesas Electronics

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RJP63K2 datasheet igbt

 

Description

RJP63K2 perform switching operations through voltage control and current sensing, and have low voltage drop and small losses for highly efficient power conversion. This enables efficient energy conversion in high-voltage power electronics.

N-Channel IGBTs are primarily used in a variety of applications, including high-voltage power conversion, inverters, uninterruptible power supplies (UPS), motor control, and energy management systems. This device can be selected to improve stability and performance in applications handling high voltage and high current.

Functions

1.  Trench gate and thin wafer technology (G6H-II series)

2.  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ

3.  High speed switching: tr= 60 ns typ, tf= 200 ns typ.

4.  Low leak current: ICES= 1 μA max

5.  Isolated package TO-220FL

Pinout

RJP63K2 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter voltage : Vces = 630 V

2. Gate to Emitter voltage : Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 60 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications

1. High Speed Power Switching

 

RJP63K2 Datasheet PDF

RJP63K2DPP-M0 pdf


Other data sheets within the file : RJP63K2DPP-M0

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