RJP30E4 IGBT – 360V N-Channel

Part number : RJP30E4

Functions : N Channel  IGBT 360V 35A (200App) 75W Tf

Manufacturer : Panasonic, Renesas

Image : TO263 Package information

RJP30E4 IGBT

Renesas Number : RJP30E4 TRANSISTOR

Panasonice Number : B1JBEN000002 Transistor

Specifications

1. Drain-Source Voltage (VCES) : 360 V
2. Collector Current (IC) ; 40 A
3. Collector Current Pulsed (IC(peak)) : 250A
4. Gate-Emitter Voltage (VGES) : +-30V
5. Power Dissipation (PD) : 30 W

 

RJP30E4 Datasheet PDF

Reference Datasheet RJP30E3