RJP30E2 Datasheet – 360V N-Ch, IGBT – RJP30E2DPP-M0

Part number : RJP30E2

Function : 360V, N Channel IGBT, High Speed Power Switching

Package :  TO-220FL Type

Manufacturer : Renesas Semiconductor

Image

Description

1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES = 1 μA max

Pinout

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 25 W

Other Part Number : RJP30E2DPK-M0, RJP30E3DPK-M0, RJP30E2DPP-M0, RJP30E3DPP-M0

RJP30E2 Datasheet