Part number : RJP3043, RJP3043DPP
Package information : TO-3P Type
Functions : IGBT, 330V, 50A
Manufacturer : Renesas, Hitachi Semiconductor
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Description
RJP3043 is a semiconductor device called IGBT (Integrated Gate Bipolar Transistor). IGBT is an insulated gate bipolar transistor, used to handle high voltages and high currents. They are widely used in power electronics, where they provide switching and amplification functions.
Features
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES = 1 μA max
RJP3043 Datasheet PDF
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