Part number : K8A50D
Functions : Field Effect Transistor Silicon N Channel MOS Type
Manufacturer : Toshiba
Image :
Functions :
Correct Part Number K8A50D, Full Part Number TA8A50D
Features
1. Low drain-source ON-resistance: RDS (ON)= 0.7 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 4.0 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Electrical Characteristics
K8A50D Datasheet PDF
Related articles across the web
Information related to components
K8A50D - - Toshiba |
L7850 - Peak emission wavelength: 1.45 m - Hamamatsu - PDF
|