K7A60W – 600V, 7A, N-ch MOSFET – Toshiba

K7A60W is a MOSFET (metal oxide semiconductor) manufactured by Toshiba.

Part number : TK7A60W

Function : 600V, 7A, Silicon N-Channel MOSFET

Package information : TO-220SIS Type

Manufacturer : Toshiba

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K7A60W mosfet transistor

Description

K7A60W MOSFET is N-channel (one type of MOSFET) and has the ability to handle 600V, 7A.

This MOSFET is primarily used in high-voltage applications and can be used in a variety of fields such as inverters, power supplies, and motor control.

Features

1. Low drain-source on-resistance: RDS(ON) = 0.5 Ω(typ.)

2. by used to Super Junction Structure : DTMOS

3. Easy to control Gate switching

4. Enhancement mode: Vth= 2.7 to 3.7 V (V DS = 10 V, ID = 0.35 mA)

Pinout

K7A60W datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID =7 A

4. Power dissipation : Pd = 30 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications

1. Switching Voltage Regulators

 

K7A60W Datasheet PDF

 

K7A60W pdf

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