K3569 PDF – Silicon N Channel MOSFET – Toshiba

Part Number : K3569

Function : Silicon N Channel MOS FET

Package : TO-220 Type

Manufactures : Toshiba

Image

K3569 MOSFET Transistor

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ) : VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

 

Pinout :

K3569 datasheet pdf

 

Features :

Switching Regulator Applications

1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

K3569 Datasheet PDF Download

K3569 pdf

Other data sheets within the file : 2SK3569, K3569