K3562 is a type of N-Channel MOSFET (metal oxide transistor) produced by the Japanese company Toshiba.
Part number : 2SK3562
Function : Vdss = 600V, N-channel MOSFET
Package : TO-220 Type
Manufacturer : Toshiba
Image
Description
K3562 is a MOSFET suitable for high voltage and high current applications. These MOSFETs are commonly used in switching applications, power conversion devices, power control systems, etc. For example, it can be used in power supplies, inverters, PWM controllers, etc.
Product Information
• Low drain-source ON resistance: RDS (ON)= 0.9Ω(typ.)
• High forward transfer admittance: |Yfs| = 5.0S (typ.)
• Low leakage current: IDSS= 100 μA (VDS= 600 V)
• Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain power dissipation (Tc = 25°C) : Pd = 40 W
5. Avalanche energy : Ear = 4 mJ
6. Channel temperature : Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C
Applications
1. Switching Regulator
K3562 Datasheet PDF
Related articles across the web
Information related to components
K3562 - - Toshiba |
K3561 N-Channel MOSFET, 2SK3561 - Toshiba Learn More | PDF |
TDA3562 - PAL/NTSC ONE-CHIP DECODER - Stm - PDF
|