K3562 – Vdss = 600V, N-ch MOSFET – Toshiba

K3562 is a type of N-Channel MOSFET (metal oxide transistor) produced by the Japanese company Toshiba.

Part number : 2SK3562

Function : Vdss = 600V, N-channel MOSFET

Package : TO-220 Type

Manufacturer : Toshiba

Image

K3562 transistor mosfet

Description

K3562 is a MOSFET suitable for high voltage and high current applications. These MOSFETs are commonly used in switching applications, power conversion devices, power control systems, etc. For example, it can be used in power supplies, inverters, PWM controllers, etc.

Product Information

•  Low drain-source ON resistance: RDS (ON)= 0.9Ω(typ.)

•  High forward transfer admittance: |Yfs| = 5.0S (typ.)

•  Low leakage current: IDSS= 100 μA (VDS= 600 V)

•  Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K3562 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 6 A

4. Drain power dissipation (Tc = 25°C) : Pd = 40 W

5. Avalanche energy : Ear = 4 mJ

6. Channel temperature : Tch = 150 °C

7. Storage temperature : Tstg = -55 to +150 °C

 

Applications

1. Switching Regulator

 

K3562 Datasheet PDF

 

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