K2611 MOSFET – 900V 9A 150W – Toshiba

K2611 is Silicon N Channel MOSFET transistor.

Part number : K2611

Package information : SC-65, TO-247 Type

Functions : 900V, N Channel MOSFET

Manufacturer : Toshiba, Winsemi

Image :
toshiba K2611 transistor

Description

This K2611 N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.

Applications

DC−DC Converter, Relay Drive and Motor Drive Applications

Pinout

K2611 pinout datasheet pdf

Features

Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
High forward transfer admittance : |Yfs| = 7.0 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 150 W
5. Single pulse avalanche energy : EAS = 663 mJ
6. Avalanche current : IAR = 9 A
7. Repetitive avalanche energy : EAR = 15 mJ

K2611 Datasheet

Other data sheets within the file : 2SK2611