Part number : K13A65U
Functions : This is MOSFET. N-Channel Field Effect Transistor
Package : TO-220 Type
Manufacturer : Toshiba Semiconductor
Image :
The texts in the PDF file :
1. Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Switching Regulator Applications
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 650 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain current DC : ID = 13 A
4. Drain power dissipation (Tc = 25°C) : PD = 40 W
5. Single pulse avalanche energy : EAS = 86 mJ
6. Avalanche current : IAR = 13 A
7. Repetitive avalanche energy : EAR = 4.0 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature range : Tstg = -55 to 150 °C
K13A65U PDF Datasheet File
Information related to components
K13A65U - - Toshiba |
LT1365 - Dual and Quad 70MHz/ 1000V/us Op Amps - Linear - PDF
|