K117 – N channel FET, Vgds = -50V – Toshiba

Part number : K117, 2SK117

Function :  N Channel FET ( Vgds = -50V, Pd = 300mW )

Manufacturer : Toshiba

Image

K117 image

Features

Low Noise Audio Amplifier Applications
1. High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0)
2. High breakdown voltage: VGDS= −50 V
3. Low noise: NF = 1.0dB (typ.)  (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)
4. High input impedance: IGSS= −1 nA (max) (VGS= −30 V)

Maximum Ratings
1. Gate-drain voltage : VGDS =  −50 V
2. Gate current : IG = 10 mA
3. Drain power dissipation : PD = 300 mW
4. Junction temperature : Tj  = 125 °C
5. Storage temperature range : Tstg = −55~125 °C

Pinout

K117 datasheet pinout

 

K117 Datasheet PDF

 



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