Part number : K10A50D

Functions : TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Manufacturer : Toshiba

Pinout :
K10A50D datasheet

Product Image :



Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en

•  Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)

•  High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)

•  Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

•  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


K10A50D Datasheet PDF PDF Download
K10A50D pdf

Other data sheets within the file : K10A50D,TK10A50D

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