IRF840 Datasheet – Vdss=500V, HEXFET MOSFET

Part number : IRF840

Functions : HEXFET Power MOSFET

Package information : TO-220AB Type

Manufacturer : IR, NXP, Philips

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IRF840 HEXFET MOSFET

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications.

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Pinout

IRF840 pinout datasheet

Features

1. Repetitive Avalanche Rated
2. Fast switching
3. High thermal cycling performance
4. Low thermal resistance

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IRF840 Datasheet PDF