Part number : HAF2015RJ, HAF2015RJ-EL-E
Functions : N Channel MOSFET
Package : SOP 8 Pin type
Manufactures : Hitachi Semiconductor, Renesas
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
1. Logic level operation (5 to 6 V Gate drive)
2. High endurance capability against to the short circuit
3. Built–in the over temperature shut–down circuit
4. Temperature hysteresis type.
5. High density mounting
Absolute Maximum Ratings
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = 16 V
3. Gate to source voltage : VGSS = –2.5 V
4. Drain current : ID = 2 A
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