Part number : DFP2N60
Functions : N-Channel MOSFET ( BV dss : 400V, I d = 2.4A )
Package information : TO 220, TO 220F Type
Manufacturer : BoSung D&I Semiconductor ( www.dnisemi.com )
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Description
DFP2N60 can be used in high voltage (600V) and high current (2.4A) applications. This means they can be used in a variety of applications, including high-performance power supply circuits, motor control, and switching circuits.
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
Features
1. RDS(on)(Max 5.5 Ω)
2. Gate Charge (Typical 15nC)
3. Improved dv/dt Capability
4. High ruggedness
5. 100% Avalanche Tested
6. Rohs Compliable
7. Halogen Free available
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 2.4 A
4. Drain power dissipation : PD = 64 W
5. Single pulse avalanche energy : Eas = 150 mJ
7. Repetitive avalanche energy : Ear = 6.4 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C
DFP2N60 Datasheet PDF
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