DFP2N60 – 600V, 2.4A, N-ch, MOSFET – DnI

Part number : DFP2N60

Functions : N-Channel MOSFET ( BV dss : 400V, I d = 2.4A )

Package information : TO 220, TO 220F Type

Manufacturer :  BoSung D&I Semiconductor ( www.dnisemi.com )

Image :

DFP2N60 transistor

Description

DFP2N60 can be used in high voltage (600V) and high current (2.4A) applications. This means they can be used in a variety of applications, including high-performance power supply circuits, motor control, and switching circuits.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

DFP2N60 spec

Features

1. RDS(on)(Max 5.5 Ω)

2. Gate Charge (Typical 15nC)

3. Improved dv/dt Capability

4. High ruggedness

5. 100% Avalanche Tested

6. Rohs Compliable

7. Halogen Free available

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 2.4 A

4. Drain power dissipation : PD = 64 W

5. Single pulse avalanche energy : Eas = 150 mJ

7. Repetitive avalanche energy : Ear = 6.4 mJ

8. Channel temperature : Tch = 150 °C

9. Storage temperature : Tstg = -55 to +150 °C

 

DFP2N60 Datasheet PDF

 

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