C945 Transistor – Amplifier Datasheet PDF

C945 Datasheet PDF learn more.

Part number : C945, 2SC945

Functions : This is a kind of semiconductor. NPN Silicon Transistor.

Pin arrangement : 1. Emitter  2. Collector  3. Base

Package information : TO 92, SOT-23 Type

Manufacturer : Kexin, NEC, UTC

Image :

C945 transistor datasheet


The texts in the PDF file :

C945 is an NPN Silicon planar epitaxial transistor designed for audio frequency amplifier. It is complementary to the PNP type A733. The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching.

Features

0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 5 150 200 150 -55 to +150 Unit V V V mA mW ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector saturation voltage Base saturation voltage Collector to base capacitance Noise figure Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob NF fT Testconditons IC=100 μA, IE=0 IC=1mA , IB=0 IE=100 μA, IC=0 VCB = 60V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0V, IC =1.0mA VCE = 6.0V, IC =0.1mA IC=100mA,IB=10mA IC=100mA,IB=10mA VCB = 10 V, IE = 0 , f = 1 MHz VCE=6V,IC=0.1mA,Rg=10kΩ,f=1kMHZ VCE=6V,IC=10mA,f =30 MHz 150 4 130 40 0.3 1.0 3.0 10 V V pF dB MHz Min 60 50 5 0.1 0.1 400 Typ Max Unit V V V μA μA 0-0.1 www.kexin.com.cn / SMD Type 2SC945 Transistors Diodes 2 www.kexin.com.cn  [ … ]

Pinout

C945 transistor pinout

 

ABSOLUTE MAXIMUM RATINGS

1. Maximum Temperature
(1) Storage Temperature : −55 to +150°C
(2) Junction Temperature : +150°C Maximum

2. Maximum Power Dissipation (TA = 25°C)
(1) Total Power Dissipation : 250 mW

3. Maximum Voltages and Currents (TA = 25°C)
(1) Collector to Base Voltage : VCBO = 60 V
(2) Collector to Emitter Voltage : VCEO =50 V
(3) Emitter to Base Voltage : VEBO = 5.0 V
(4) Collector Current : IC = 100 mA
(5) Base Current : IB = 20 mA

FEATURES
1. High voltage : LVCEO = 50 V MIN.
2. Excellent hFE linearity : hFE1 = (0.1 mA)/hFE2 (1.0 mA) = 0.92 TYP.

C945 Transistor Datasheet PDF File