W9NK95Z – STW9NK95Z

W9NK95Z Datasheet PDF learn more.

Part number : W9NK95Z

Functions : This is a kind of semiconductor, STW9NK95Z.

Pin arrangement :

Package information :

Manufacturer : STMicroelectronics

Image :

W9NK95Z Datasheet PDF

The texts in the PDF file :

STW9NK95Z N-channel 950 V – 1.15 Ω – 7 A – TO-247 Zener-protected SuperMESHTM Power MOSFET

Features

Type STW9NK95Z VDSS RDS(on) Max ID 950 V < 1.38 Ω 7 A Pw 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized Application ■ Switching applications

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code STW9NK95Z Marking 9NK95Z Package TO-247 Packaging Tube July 2008 Rev 2 1/12 www.st.com 12 Contents Contents STW9NK95Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW9NK95Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM(1) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC=100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating Factor Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ) dv/dt(2) Peak diode recovery voltage slope TJ Operating junction temperature Tstg Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 7 A, di/dt ≤ 10 [ … ]

W9NK95Z PDF File



This entry was posted in Uncategorized. Bookmark the permalink.