VN66AFD – N-Channel Enhancement-Mode MOS Transistors

VN66AFD Datasheet PDF learn more.

Part number : VN66AFD

Functions : This is a kind of semiconductor, N-Channel Enhancement-Mode MOS Transistors.

Pin arrangement :

Package information :

Manufacturer : New Jersey Semiconductor

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VN66AFD Datasheet PDF

The texts in the PDF file :

20 STERNAVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VN66 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)DSS ros(ON) ID NUMBER (V) (n> (A) PACKAGE VN66AD 60 3 1.7 TO-220 TO-220/TO-220SD TOP VIEW VN66AFD 60 3 1,46 TO-Z20SD Performance Curves: VNDQ06 (See Section 7) TO-220 1 GATE 2 & TAB- DRAIN 3 SOURCE 1 23 TO-220SD 1 SOURCE 2 GATE 3 & TAB – DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)2 PARAMETERS/TEST CONDITIONS SYMBOL VN66AD VN86AFD UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC=25°C Tc = WC Power Dissipation Tc= 25°C Tc = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16″ from case for 10 seconds) VDS VQS lID., I DM PD Tj. Tstg TL 60 60 ±30 ±30 1,7 1.46 1 0.92 33 20 15 86 -55 to 150 300 V A W “C THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Case RthJC ‘Pulse width limited by maximum junction temperature. 2Absolute maximum ratings have been revised. VN66AD 6.25 VN66AFD 8.3 UNITS “C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors VN66 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS4 TYPa STATIC Drain-Source Breakdown Voltage Gato Threshold Voltage Date-Body Leakage Zero Gate Voltage Drain Currant On-State Drain Current^ Drain-Source cm-Resistance’ Forward , Transconductanos •* Common Source Output Conductance3 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer [ … ]


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