TPH2900ENH Datasheet PDF learn more.
Part number : TPH2900ENH
Functions : This is a kind of semiconductor, Silicon N-channel MOSFET.
Pin arrangement :
Package information :
Manufacturer : Toshiba
The texts in the PDF file :
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2900ENH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.
(1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH2900ENH 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 36 A Drain current (DC) (Continuous) (Note 1) ID 33 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 102 Power dissipation (Tc = 25 ) PD 78 W Power dissipation (t = 10 s) (Note 3) PD 2.8 Power dissipation (t = 10 s) (Note 4) PD 1.6 Single-pulse avalanche energy (Note 5) EAS 176 mJ Avalanche current IAR 33 A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2013-10-02 Rev.1.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (Note 3) Channel-to-ambient thermal resistance (t = [ … ]
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