TPC8103 – Silicon P Channel MOS Type Field Effect Transistor

TPC8103 Datasheet PDF learn more.

Part number : TPC8103

Functions : This is a kind of semiconductor, Silicon P Channel MOS Type Field Effect Transistor.

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Package information :

Manufacturer : Toshiba Semiconductor

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TPC8103 Datasheet PDF

The texts in the PDF file :

TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC8103 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance: |Yfs| = 20 S (typ.) l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) l Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg −30 −30 ±20 −11 −44 2.4 1.0 157 −11 0.24 150 −55 to 150 V V V A W W mJ A mJ °C °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 1 2003-02-20 Thermal Characteristics Characteristics Symbol Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) Rth (ch-a) Max 52.1 125 Unit °C/W °C/W Marking (Note 5) TPC8103 TPC8103 ※ Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −11 A Note 4: Reptitve rating; pulse width limited by maximum channel [ … ]

TPC8103 PDF File



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