TC58NVG0S3HTA00 – 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

TC58NVG0S3HTA00 Datasheet PDF learn more.

Part number : TC58NVG0S3HTA00

Functions : This is a kind of semiconductor, 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM.

Pin arrangement :

Package information :

Manufacturer : Toshiba

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TC58NVG0S3HTA00 Datasheet PDF

The texts in the PDF file :

TC58NVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTA00 is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes  8 Kbytes: 2176 bytes  64 pages). The TC58NVG0S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES  Organization Memory cell array Register Page size Block size x8 2176  64K  8 2176  8 2176 bytes (128K  8K) bytes  Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy  Mode control Serial input/output Command control  Number of valid blocks Min 1004 blocks Max 1024 blocks  Power supply VCC  2.7V to 3.6V  Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=50pF)  Program/Erase time Auto Page Program Auto Block Erase 300 s/page typ. 2.5 ms/block typ.  Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 A max  Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)  8 bit ECC for each 512Byte is required. 1 2012-08-31C PIN ASSIGNMENT (TOP VIEW) PIN NAMES 8 NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 [ … ]

TC58NVG0S3HTA00 PDF File


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Cmos TC58NVG0S3HTA00 - - Toshiba

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