TA8227P – LOW FREQUENCY POWER AMPLIFIER

TA8227P Datasheet PDF learn more.

Part number : TA8227P

Functions : This is a kind of semiconductor, LOW FREQUENCY POWER AMPLIFIER.

Pin arrangement :

Package information :

Manufacturer : Toshiba

Image :

TA8227P Datasheet PDF

The texts in the PDF file :

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8227P Low Frequency Power Amplifier TA8227P is an audio power IC with built-in two channels developed for portable radio cassette tape recorder with power ON/OFF switch. Because of the parts reduction and DIP (Dual Inline Package), space merit is remarkable. Thermal shut down protection circuit is built in.

Features

· High power : Pout = 2.5 W/CH (typ.) (VCC = 9 V, RL = 4 Ω, f = 1 kHz, THD = 10%) Weight: 1.4 g (typ.) : Pout = 3.0 W/CH (typ.) (VCC = 9 V, RL = 3 Ω, f = 1 kHz, THD = 10%) · Voltage gain : Gv = 45.0dB (typ.) (Rf = 120 Ω, f = 1 kHz) : Gv = 56.5dB (typ.) (Rf = 0 Ω, f = 1 kHz) · Small quiescent current : ICCQ = 21 mA (typ.) (VCC = 9 V, Vin = 0) · Ripple rejection ratio : R.R. = −52dB (typ.) (VCC = 9 V, fripple = 100 Hz, Rg = 600 Ω) · Cross Talk : C.T. = −50dB (typ.) (VCC = 9 V, f = 1 kHz, Rg = 600 Ω) · Output noise voltage : Vno = 0.3 mVrms (typ.) (VCC = 9 V, Rg = 10 kΩ, BW = 20 Hz~20 kHz) · Stand-by switch · Soft clip · Built-in thermal shut down protection circuit · Operation supply voltage range: VCC (opr) = 5~12 V (Ta = 25°C) · Low popping noise at power ON · Best for supply voltage 9 V TA8227P 1 2002-03-05 Block Diagram TA8227P Application Information and Application Method 1. Adjustment of voltage gain The voltage gain Gv is obtained as follows by R1, R2 and Rf in Figure 1. Gv = 20 log Rf + R1 + R2 Rf + R1 When Rf = 0 Ω Gv = 56.5dB (typ.) When Rf = 120 Ω Gv = 45dB (typ.) Figure 1 By increasing Rf, reduction of Gv is possible. However, since the feedback increase is liable to produce oscillation, it is recommended to use this at 40dB or over. 2. Thermal shut-down circuit The thermal shut-down circuit is built in for the purpose of preventing the destruction of IC due to the abnormal temperature rise when the heat radiation is insufficient. The operation temperature is set at radiation Fin temperature 175°C (typ.). At [ … ]

TA8227P PDF File



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