T16N50 – AOT16N50

T16N50 Datasheet PDF learn more.

Part number : T16N50

Functions : This is a kind of semiconductor, AOT16N50.

Pin arrangement :

Package information :

Manufacturer : Alpha & Omega Semiconductors

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T16N50 Datasheet PDF

The texts in the PDF file :

AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General


Product Summary The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add “L” suffix to part number: AOT16N50L & AOTF16N50L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 16A < 0.37Ω D G D S AOT16N50 G D S AOTF16N50 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT16N50 AOTF16N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 16 16* 11 11* 64 6 540 1080 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 50.0 2.2 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT16N50 65 0.5 AOTF16N50 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.45 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev3: Jul 2011 www.aosmd.com Page 1 of 6 AOT16N50/AOTF16N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 500 600 V BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V 0.5 [ ... ]

T16N50 PDF File

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