SVF4N65F – 650V N-channel enhancement mode MOSFET

SVF4N65F Datasheet PDF learn more.

Part number : SVF4N65F

Functions : This is a kind of semiconductor, 650V N-channel enhancement mode MOSFET.

Pin arrangement :

Package information :

Manufacturer : SL

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SVF4N65F Datasheet PDF

The texts in the PDF file :

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N65T SVF4N65F SVF4N65FG SVF4N65M Package TO-220-3L TO-220F-3L TO-220F-3L TO-251-3L Marking SVF4N65T SVF4N65F SVF4N65FG SVF4N65M Material Pb free Pb free Halogen free Pb free Packing Tube Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http:// REV:1.0 2011.01.18 Page 1 of 9 SVF4N65T/F(G)/M_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVF4N65T 100 0.80 Ratings SVF4N65F(G) 650 ±30 4.0 2.8 16 33 0.26 202 -55~+150 -55~+150 SVF4N65M 77 0.62 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVF4N65T 1.25 62.5 Ratings SVF4N65F(G) 3.79 120 SVF4N65M 1.62 110 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current G [ … ]


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