SVF4N60F – 600V N-CHANNEL MOSFET

SVF4N60F Datasheet PDF learn more.

Part number : SVF4N60F

Functions : This is a kind of semiconductor, 600V N-CHANNEL MOSFET.

Pin arrangement :

Package information :

Manufacturer : SILAN MICROELECTRONICS

Image :

SVF4N60F Datasheet PDF

The texts in the PDF file :

SVF4N60D/F/FG/T/K/M/MJ_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE

ORDERING INFORMATION

Part No. SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60DTR SVF4N60MJ SVF4N60M

Package TO-220-3L TO-220F-3L TO-220F-3L TO-262-3L TO-252-2L TO-252-2L TO-251J-3L TO-251D-3L

Marking SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60D SVF4N60MJ SVF4N60M

HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn

Material Pb free Pb free Halogen free Pb free Pb free Pb free Pb free Pb free

Packing Tube Tube Tube Tube Tube
Tape & Reel Tube Tube

REV:1.6

2012.07.24 Page 1 of 11

Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted;reference only)

Characteristics

Drain-Source Voltage

Gate-Source Voltage

Drain Current Drain Current Pulsed

TC=25°C TC=100°C

Power Dissipation(TC=25°C) -Derate above 25°C

Single Pulsed Avalanche Energy(Note 1)

Operation Junction Temperature Range

Storage Temperature Range

Symbol

SVF4N 60T

Ratings SVF4N SVF4N SVF4N 60F(G) 60D/M 60MJ

SVF4N 60K

Unit

VDS 600 V VGS ±30 V

4.0 ID A
2.5

IDM 16 A 100 33 77 86 95 W
PD 0.8 0.26 0.62 0.69 0.76 W/°C

EAS 217 mJ

TJ

-55~+150

°C

Tstg

-55~+150

°C

THERMAL CHARACTERISTICS

Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junc [ … ]

SVF4N60F PDF File



This entry was posted in Uncategorized. Bookmark the permalink.