S2000AF – SILICON POWER TRANSISTOR

S2000AF Datasheet PDF learn more.

Part number : S2000AF

Functions : This is a kind of semiconductor, SILICON POWER TRANSISTOR.

Pin arrangement :

Package information :

Manufacturer : SavantIC

Image :

S2000AF Datasheet PDF

The texts in the PDF file :

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000AF DESCRIPTION ·With TO-3P(H)IS package ·High voltage ·Fast switching APPLICATIONS ·Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V;f=5MHz 8 7 MIN 700 10 S2000AF SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V V 1.0 1.3 1 2 1 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3µH 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2000AF Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 [ … ]

S2000AF PDF File



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