RU190N08 – N-Channel Advanced Power MOSFET

RU190N08 Datasheet PDF learn more.

Part number : RU190N08

Functions : This is a kind of semiconductor, N-Channel Advanced Power MOSFET.

Pin arrangement :

Package information :

Manufacturer : Ruichips

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RU190N08 Datasheet PDF

The texts in the PDF file :

RU190N08 N-Channel Advanced Power MOSFET

Features

Pin

Description

· 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 TO-220F TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 80 ±25 175 -55 to 175 190 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 700 190 140 400 220 ② A W 0.45 62.5 °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 2000 mJ -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev. C – JAN., 2010 www.ruichips.com http:// RU190N08 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU190N08 Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 80V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 80 1 30 2 3 4 ±100 3.9 4.8 V µA V nA mΩ Diode Characteristics VSD trr qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=40 A, VGS=0V ISD=40A, dlSD/dt=100A/µs 0.8 68 130 1.3 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capaci [ … ]

RU190N08 PDF File



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