RD01MUS2B – Silicon MOSFET Power Transistor

RD01MUS2B Datasheet PDF learn more.

Part number : RD01MUS2B

Functions : This is a kind of semiconductor, Silicon MOSFET Power Transistor.

Pin arrangement :

Package information :

Manufacturer : Mitsubishi Electric Semiconductor

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RD01MUS2B Datasheet PDF

The texts in the PDF file :

< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES •High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.2V,f=527MHz •Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANCE RD01MUS2B-101,T113 is a RoHS compliant products. 0.1 MAX www.DataSheet.net/ This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 Junction to case RATINGS 25 -5/+10 3.6 100 600 150 -40 to +125 34.5 UNIT V V W mW mA °C °C °C/W D G S SCHEMATIC DRAWING Note: Above parameters are guaranteed independently. Publication Date : Nov.2011 1 Datasheet pdf – http://.co.kr/ 3.9+/-0.3 < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout d PARAMETER CONDITIONS MIN 0.5 1.0 60 LIMITS TYP 1.0 1.6 70 MAX 50 1 1.5 – UNIT Zero gate [ … ]


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