RD01MUS2 – Silicon MOSFET Power Transistor

RD01MUS2 Datasheet PDF learn more.

Part number : RD01MUS2

Functions : This is a kind of semiconductor, Silicon MOSFET Power Transistor.

Pin arrangement :

Package information :

Manufacturer : Mitsubishi Electric

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RD01MUS2 Datasheet PDF

The texts in the PDF file :

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. TYPE NAME 0.8 MIN 2.5+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ. •Integrated gate protection diode 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX RoHS COMPLIANT RD01MUS2-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V -5/+10 V Tc=25°C 3.6 W Zg=Zl=50Ω 60 mW 600 mA °C 150 -40 to +125 °C °C/W Junction to case 34.5 SCHEMATIC DRAWING Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS Vth Pout ηd PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 5 [ … ]


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