PMBF170 – N-channel enhancement mode vertical D-MOS transistor

PMBF170 Datasheet PDF learn more.

Part number : PMBF170

Functions : This is a kind of semiconductor, N-channel enhancement mode vertical D-MOS transistor.

Pin arrangement :

Package information :

Manufacturer : Philips

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PMBF170 Datasheet PDF

The texts in the PDF file :

DISCRETE SEMICONDUCTORS DATA SHEET PMBF170 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 10 V PINNING – SOT23 1 2 3 = gate = source = drain VDS ± VGSO ID Ptot RDS(on) | Yfs| max. max. max. max. typ. max. min. typ. PMBF170 60 V 20 V 250 mA 300 mW 2.5 Ω 5.0 Ω 100 mS 200 mS Marking code: PMBF170 = PKX PIN CONFIGURATION handbook, halfpage 3 handbook, 2 columns d g 1 Top view 2 MSB003 MBB076 – 1 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) From junction to ambient (note 2) Notes 1. Mounted on ceramic substrate measuring 10 mm × 8 mm × 0.7 mm. 2. Mounted on printed-circuit board. Rth j-a Rth j-a = = VDS ± VGSO ID IDM Ptot Tstg Tj max. max. max. max. max. max. max. PMBF170 60 V 20 V 250 mA 500 mA 300 mW (note 1) 250 mW (note 2) 150 °C −65 to +150 °C 430 K/W 500 K/W April 1995 [ … ]

PMBF170 PDF File



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