PJD50N10AL – 100V N-Channel Enhancement Mode MOSFET

PJD50N10AL Datasheet PDF learn more.

Part number : PJD50N10AL

Functions : This is a kind of semiconductor, 100V N-Channel Enhancement Mode MOSFET.

Pin arrangement :

Package information :

Manufacturer : Pan Jit International

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PJD50N10AL Datasheet PDF

The texts in the PDF file :

PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A


 RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data TO-252  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0104 ounces, 0.297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC TC=100oC Pulsed Drain Current (Note 1) TC=25oC Power Dissipation TC=25oC TC=100oC Continuous Drain Current TA=25oC TA=70oC Power Dissipation TA=25oC Power Dissipation TA=70oC Single Pulse Avalanche Energy (Note 6) Operating Junction and Storage Temperature Range Typical Thermal Resistance(Note 4,5) Junction to Case Junction to Ambient  Limited only By Maximum Junction Temperature SYMBOL VDS VGS ID IDM PD ID PD EAS TJ,TSTG RθJC RθJA LIMIT 100 +20 42 26 150 83 33 6.3 5.1 2.0 1.3 63.4 -55~150 1.5 62.5 UNITS V V A W A A W mJ oC oC/W July 9,2015-REV.00 Page 1 PPJD50N10AL Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS VSD TEST CONDITION VGS=0V,ID=250uA VDS=VGS, I [ ... ]


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