NVMFS5C410N Datasheet PDF learn more.

Part number : NVMFS5C410N

Functions : This is a kind of semiconductor, Power MOSFET.

Pin arrangement :

Package information :

Manufacturer : ON Semiconductor

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NVMFS5C410N Datasheet PDF

The texts in the PDF file :

NVMFS5C410N Power MOSFET 40 V, 0.92 mW, 300 A, Single N−Channel


• Small Footprint (5×6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C410NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C TC = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 40 ±20 300 212 166 83 46 32 3.9 1.9 900 −55 to + 175 V V A W A W A °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 34 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 158 A EAS 578 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com V(BR)DSS 40 V RDS(ON) MAX 0.92 [ … ]


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