N1HNK60 Datasheet PDF learn more.
Part number : N1HNK60
Functions : This is a kind of semiconductor, STN1HNK60.
Pin arrangement :
Package information :
Manufacturer : STMicroelectronics
The texts in the PDF file :
STD1NK60 – STD1NK60-1 STQ1HNK60R – STN1HNK60 N-CHANNEL 600V – 8Ω – 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General
TYPE VDSS RDS(on) ID Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 600 V 600 V 600 V 600 V < 8.5 Ω < 8.5 Ω < 8.5 Ω < 8.5 Ω 1A 1A 0.4 A 0.4 A 30 W 30 W 3W 3.3 W ■ TYPICAL RDS(on) = 8 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Figure 1: Package TO-92 (Ammopack) 3 1 DPAK 3 2 1 IPAK 2 3 2 1 SOT-223 Figure 2: Internal Schematic Diagram APPLICATIONS ■ LOW POWER BATTERY CHARGERS ■ SWITH MODE LOW POWER SUPPLIES(SMPS) ■ LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS) Table 2: Order Codes Part Number STD1NK60T4 STD1NK60-1 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 Marking D1NK60 D1NK60 1HNK60R 1HNK60R N1HNK60 February 2006 Package DPAK IPAK TO-92 TO-92 SOT-223 Packaging TAPE & REEL TUBE BULK AMMOPAK TAPE & REEL Rev. 3 1/15 STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 3: Absolute Maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS [ ... ]
N1HNK60 PDF File