MT3205 – 55V, 110A, MOSFET

Part number : MT3205

Functions : N-Channel Power MOSFET, This is Semiconductor.

Manufacturer : MOS-TECH

Image :

MT3205 Datasheet PDF

The texts in the PDF file :

MT3205 N-Channel Power® MOSFET MOS-TECH Semiconductor Co.,LTD Mar 2010 MT3205

Features

N-Channel Power® MOSFET 55V, 110A, 7.2mΩ

Description

• This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • RDS(on) = 6.1mΩ ( Typ.)@ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS(on) • High power and current handing capability • RoHS compliant D G DS TO-220 G MT Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Power Dissipation – Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) – Pulsed (Note 2) (Note 1) Ratings 55 ±20 110 390 365 250 1.0 -55 to +175 Units V V A A mJ W W/oC oC Operating and Storage Temperature Range Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.75 40 Units oC/W ©2010 MOS-TECH Semiconductor Corporation MT3205 Rev. D 1 www.mtsemi.com Free Datasheet http://www.nDatasheet.com Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking MT3205 Device MT3205 Package TO-220 Reel Size Tape Width Quantity 50units Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250μA, VGS = 0V, TJ = 25oC VDS = 44V, TC = 150oC VGS = ±20V, VDS = 0V VDS = 44V, VGS = 0V 55 25 250 ±100 V μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain to Source On Resistance VGS = VDS, ID = 250μA 2 4 V VGS = 10V, ID = 59A VGS = 10V, ID = 59A TJ = 175oC – 6.1 12 7.2 mΩ Dynamic Character [ … ]

MT3205 PDF File


Information related to components

Mosfet MT3205 - - Mos-tech

PDF
  

MOS-TECH

Mosfet MT3202 - Mos-tech

Learn More | PDF
  
MOS-TECH

Mosfet IRF3205 - N-Channel Trench Process Power MOSFET Transistor - Thinki - PDF   

Thinki Semiconductor

This entry was posted in Uncategorized. Bookmark the permalink.