MRF6V2010NBR1 – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

MRF6V2010NBR1 Datasheet PDF learn more.

Part number : MRF6V2010NBR1

Functions : This is a kind of semiconductor, RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs.

Pin arrangement :

Package information :

Manufacturer : Freescale Semiconductor

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MRF6V2010NBR1 Datasheet PDF

The texts in the PDF file :

Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N – Channel Enhancement – Mode Lateral MOSFETs Designed primarily for CW large – signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain — 23.9 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power

Features

• Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • TO – 270 – 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO – 272 – 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2010NR1 MRF6V2010NBR1 10 – 450 MHz, 10 W, 50 V LATERAL N – CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 – 08, STYLE 1 TO – 270 – 2 PLASTIC MRF6V2010NR1 CASE 1337 – 03, STYLE 1 TO – 272 – 2 PLASTIC MRF6V2010NBR1 Table 1. Maximum Ratings Rating Drain – Source Voltage Gate – Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value – 0.5, +110 – 0.5, +10 – 65 to +150 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 10 W CW Symbol RθJC Value (1,2) 3.0 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF6V2010NR1 MRF6V2010NBR1 1 RF Device Data Freescale Sem [ … ]

MRF6V2010NBR1 PDF File



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