MEA75-12DA – Fast Recovery Epitaxial Diode (FRED) Module

MEA75-12DA Datasheet PDF learn more.

Part number : MEA75-12DA

Functions : This is a kind of semiconductor, Fast Recovery Epitaxial Diode (FRED) Module.

Pin arrangement :

Package information :

Manufacturer : IXYS Corporation

Image :

MEA75-12DA Datasheet PDF

The texts in the PDF file :

Fast Recovery Epitaxial Diode (FRED) Module Preliminary data VRSM V 1200 VRRM V 1200 Type MEA75-12 DA 1 2 3 MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA VRRM = 1200 V IFAV = 75 A trr = 250 ns TO-240 AA 1 3 2 MEK 75-12 DA 1 2 3 MEE 75-12 DA 1 2 3 Symbol IFRMS IFAV IFRM IFSM Test Conditions Tcase= 75 °C Tcase= 75 °C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 107 75 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s °C °C °C W V~ V~ TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

Features

International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873 q q q q q q q TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 100 A; IF = 300 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM TVJ TVJ TVJ TVJ = 125°C = 25°C = 125°C = 25°C Tcase = 25°C 50/60 Hz, RMS t = 1 min t=1s IISOL ≤ 1 mA Mounting torque (M5) Terminal connection torque (M5) Creep distance on surface Strike distance through air Maximum allowable acceleration 280 3000 3600 Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders q q q q q 2.50-4/22-35 Nm/lb.in. 2.50-4/22-35 Nm/lb.in. 12.7 9.6 50 90 mm mm m/s2 g Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses q q q q Characteristic Values (per diode) typ. max. 2 0.5 [ … ]

MEA75-12DA PDF File



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