ME60N03 – 30V N-Channel Enhancement Mode MOSFET

ME60N03 Datasheet PDF learn more.

Part number : ME60N03

Functions : This is a kind of semiconductor, 30V N-Channel Enhancement Mode MOSFET.

Pin arrangement :

Package information :

Manufacturer : Matsuki

Image :

ME60N03 Datasheet PDF

The texts in the PDF file :

ME60N03 30V N-Channel Enhancement Mode MOSFET VDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5mΩ RDS(ON), Vgs@4.5V,Ids@20A =13mΩ FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg EAS RθJA RθJC Limit 30 ±20 50 100 50 23 -55 to 150 110 T≦10 sec Steady State 20 15 40 Unit V V A A W ℃ mJ ℃/W ℃/W Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse(L=0.5mH,Rg=25Ω) Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2007 – Version 4.1 01 ME60N03 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) DYNAMIC Qg Qgs Qgd Ciss Coss Crss Rg Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time RL=15Ω, VGEN =10V, ID=1A VDD=15V, RG=24Ω VDS=15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz VDS=15V, VGS=10V, ID=35A 22 4.5 4 1100 240 90 2.5 13 10 46 7 17 13 58 10 ns Ω 1300 pF 25 nC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±20V VDS=24V, VGS=0V VGS=10V, ID=30A VGS=4.5V, ID=20A 6.5 10 30 1 1.6 3 ±100 1 8.5 13 V V nA μA mΩ Parameter Limit Min Typ Max Unit td(on) tr td(off) tf IS VSD SOURCE-DRAIN DIODE Max.Diode Forward Current Diode Forward Vol [ … ]

ME60N03 PDF File

This entry was posted in Uncategorized. Bookmark the permalink.