MDF4N65B – N-Channel MOSFET

MDF4N65B Datasheet PDF learn more.

Part number : MDF4N65B

Functions : This is a kind of semiconductor, N-Channel MOSFET.

Pin arrangement :

Package information :

Manufacturer : MagnaChip

Image :

MDF4N65B Datasheet PDF

The texts in the PDF file :

MDF4N65B N-channel MOSFET 650V MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2Ω General


These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.


VDS = 650V ID = 4.0A RDS(ON) ≤ 2.2 Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Jul. 2012 Version 1.2 1 G Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Symbol RθJA RθJC S Rating 650 ±30 4.0* 2.6* 16* 35 0.28 3.5 4.5 170 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Rating 62.5 3.55 Unit oC/W MagnaChip Semiconductor Ltd. MDF4N65B N-channel MOSFET 650V Ordering Information Part Number MDF4N65BTH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Dra [ … ]


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