MDD1951 – Single N-Channel Trench MOSFET

MDD1951 Datasheet PDF learn more.

Part number : MDD1951

Functions : This is a kind of semiconductor. Single N-Channel Trench MOSFET.

Pin arrangement :

Package information :

Manufacturer : MagnaChip

Image :

MDD1951 Datasheet PDF

The texts in the PDF file :

MDD1951– Single N-Channel Trench MOSFET 60V MDD1951 Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ General

Description

The MDD1951 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.

Features

VDS = 60V ID = 17.9A @VGS = 10V RDS(ON) < 45.0mΩ@ VGS = 10V < 55.0mΩ@ VGS = 4.5V Applications Inverters General purpose applications D G S Absolute Maximum Ratings (TC =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (Note 2) Pulsed Drain Current Power Dissipation for Single Operation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC TA=25oC (a) (b) TC=25oC TA=25oC (Note 3) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State) Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 60 ±20 17.9 4.4 80 32.8 2.0 50 -55~+150 Rating 60 3.8 Unit V V A A A W mJ oC Unit oC/W December 2009. Version 1.1 1 MagnaChip Semiconductor Ltd. MDD1951– Single N-Channel Trench MOSFET 60V Ordering Information Part Number MDD1951RH Temp. Range -55~150oC Package TO-252 Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode R [ ... ]

MDD1951 PDF File



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