MDD1501 – Single N-channel Trench MOSFET

MDD1501 Datasheet PDF learn more.

Part number : MDD1501

Functions : This is a kind of semiconductor, Single N-channel Trench MOSFET.

Pin arrangement :

Package information :

Manufacturer : MagnaChip

Image :

MDD1501 Datasheet PDF

The texts in the PDF file :

MDD1501 – Single N-Channel Trench MOSFET 30V MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ General

Description

The MDD1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1501 is suitable device for DC to DC converter and general purpose applications.

Features

 VDS = 30V  ID = 67.4A @VGS = 10V  RDS(ON) (MAX) < 5.6mΩ @VGS = 10V < 8.6mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested D G Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Oct. 2015. Version 1.4 1 S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 30 ±20 67.4 53.9 25.1(3) 20.2(3) 270 44.6 28.5 6.2(3) 4.0(3) 94 -55~150 Unit V V A A W mJ oC Symbol RθJA RθJC Rating 20.0 2.8 Unit oC/W MagnaChip Semiconductor Ltd. MDD1501 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDD1501RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel Quantity 3000 units Rohs Status Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Symbol BVDSS VGS(th) IDSS IGSS Drain-Source ON Resistance RDS(ON) Forward Transconductance Dynamic Characteristics Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Di [ ... ]

MDD1501 PDF File



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