Part number : K2961
Functions : 2SK2961, This is Semiconductor.
Manufacturer : Toshiba Semiconductor
The texts in the PDF file :
2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.2 Ω (typ.) : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 60 60 ±20 2.0 6.0 0.9 150 −55~150 Unit V V V A W °C °C Pulse (Note 1) JEDEC JEITA TOSHIBA TO-92MOD — 2-5J1C Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 138 Unit °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-17 2SK2961 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Rever [ … ]
K2961 PDF File