K1358 – 2SK1358

K1358 Datasheet PDF learn more.

Part number : K1358

Functions : This is a kind of semiconductor. 2SK1358.

Pin arrangement :

Package information :

Manufacturer : Toshiba Semiconductor

Image :

K1358 Datasheet PDF

The texts in the PDF file :

TOSHIBA Discrete Semiconductors 2SK1358 Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

Features

Industrial Applications Unit in mm • Low Drain-Source ON Resistance – RDS(ON) = 1.1Ω (Typ.) • High Forward Transfer Admittance – Yfs = 4.0S (Typ.) • Low Leakage Current – IDSS = 300µA (Max.) @ VDS = 720V • Enhancement-Mode – Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range SYMBOL VDSS VDGR VGSS ID IDP PD Tch Tstg RATING 900 900 ±30 9 27 150 150 -55 ~ 150 UNIT V V V A W °C °C Thermal Characteristics CHARACTERISTIC Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient SYMBOL Rth(ch-c) Rth(ch-a) MAX. 0.833 50 UNIT °C/W °C/W This transistor is an electrostatic sensitive device. Please handle with care. TOSHIBA CORPORATION 1/6 2SK1358 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Drain Cut-off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time SYMBOL IGSS IDSS V(BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff TEST CONDITION VGS = ±25V, VDS = 0V VDS = 720V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, ID = 1mA ID = 4A, VGS = 10V VDS = 20V, ID = 4A VDS = 25V, VGS = 0V, f = 1MHz MIN. – – 900 1.5 – 2.0 – – – – – – – TYP. – – – – 1.1 4.0 1300 100 180 25 40 20 100 MAX. ±100 300 – 3.5 1.4 – 1800 150 260 50 80 40 200 UNIT nA µA V V Ω S pF ns Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Sou [ … ]

K1358 PDF File



This entry was posted in Uncategorized. Bookmark the permalink.