JCS640CH – N-CHANNEL MOSFET

JCS640CH Datasheet PDF learn more.

Part number : JCS640CH

Functions : This is a kind of semiconductor, N-CHANNEL MOSFET.

Pin arrangement :

Package information :

Manufacturer : JILIN SINO-MICROELECTRONICS

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JCS640CH Datasheet PDF

The texts in the PDF file :

N 沟道增强型场效应晶体管 N- CHANNEL MOSFET R JCS640H 主要参数 MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max (@Vgs=10V) 0.15Ω Qg-typ 27.5nC 封装 Package 用途  高频开关电源  电子镇流器  UPS 电源 APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS 产品特性 FEATURES 低栅极电荷 Low gate charge 低 Crss (典型值 25pF) Low Crss (typical 25pF ) 开关速度快 Fast switching 产品全部经过雪崩测试 100% avalanche tested 高抗 dv/dt 能力 Improved dv/dt capability RoHS 产品 RoHS product 订货信息 ORDER MESSAGE 订货型号 Order codes JCS640VH-O-V-N-B JCS640RH-O-R-N-B JCS640RH-O-R-N-A JCS640CH-O-C-N-B JCS640FH-O- F-N-B 印记 Marking JCS640VH JCS640RH JCS640RH JCS640CH JCS640FH 封装 无卤素 包装 Package Halogen Free Packaging IPAK DPAK DPAK TO-220C TO-220MF 否 NO 否 NO 否 NO 否 NO 否 NO 条管 Tube 条管 Tube 编带 Brede 条管 Tube 条管 Tube 器件重量 Device Weight 0.35 g(typ) 0.35 g(typ) 0.35 g(typ) 2.06 g(typ) 2.22 g(typ) 版本:201510B 1/12 R 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 数值 项目 符号 Value Parameter 最高漏极-源极直流电压 Drain-Source Voltage Symbol VDSS JCS640VH/RH/CH 200 连续漏极电流 Drain Current -continuous 最大脉冲漏极电流(注 1) Drain Current -pulse (note 1) 最高栅源电压 Gate-Source Voltage 单脉冲雪崩能量(注 2) ID T=25℃ T=100℃ IDM VGSS 18 16 72 ±30 Single Pulsed Avalanche Energy(note 2) EAS 雪崩电流(注 1) Avalanche Current(note 1) IAR 重复雪崩能量(注 1) 259 18 Repetitive Avalanche Current (note 1) 二极管反向恢复最大电压变 EAR 14 化速率(注 3) Peak Diode Recovery dv/dt (note 3) dv/dt 5.5 耗散功率 Power Dissipation 最高结温及存储温度 PD TC=25℃ -Derate above 25℃ [ … ]

JCS640CH PDF File



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