IRFZ44N Datasheet PDF learn more.

Part number : IRFZ44N

Functions : This is a kind of semiconductor, N-CHANNEL Power MOSFET.

Pin arrangement :

Package information :

Manufacturer : Matsu

Image :

IRFZ44N Datasheet PDF

The texts in the PDF file :

APPLICATION ‹ Buck Converter High Side Switch ‹DC motor control , Ups …etc , & other Application VDSS 55V RDS(ON) Max. 17.5mȍ PIN CONFIGURATION TO-220 Front View ID 50A IRFZ44N N-CHANNEL Power MOSFET FEATURES ‹Ultra Low ON Resistance ‹Low Gate Charge ‹ Dynamic dv/dt Rating ‹ Inductive Switching Curves ‹ Peak Current vs Pulse Width Curve SYMBOL D GATE DRAIN SOURCE G S 12 3 ʳ ABSOLUTE MAXIMUM RATINGS N-Channel MOSFET Rating Drain to Source Voltage Drain to Current Ё Continuous Tc = 25к, VGS@10V Ё Continuous Tc = 100к, VGS@10V Ё Pulsed Tc = 25к, VGS@10V (Note 1) Gate-to-Source Voltage Ё Continue Total Power Dissipation Derating Factor above 25к Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Repetitive Avalanche Energy (Note 1) Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Avalanche Current (Note 1) Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAR TL TPKG IAR Value 55 50 35 160 ±20 .94 0.63 5.0 -55 to 175 9.4 300 260 25 Unit V A V W W/к V/ns к mJ к к A THERMAL RESISTANCE Symbol Parameter RșJC Junction-to-case Min Typ RșJA Junction-to-ambient Max 1.5 62 Units к/W к/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175к 1 cubic foot chamber, free air Page 1 ORDERING INFORMATION Part Number Package ………………..IRFZ44N…………………………………………TO-220 IRFZ44N N-CHANNEL Power MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. Characteristic Symbol OFF Characteristics cIRFZ44N Min Typ Max Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient (Reference to 25к, ID = 1mA) VDSS ӔVDSS/ǻTJ Drain-to-Source Leakage Current (VDS = 55 V, VGS = 0 V, TJ = 25к) (VDS = 44 V, VGS = 0 V, TJ = 150к) IDSS Gate-to-Source Forward Leakage (VGS = 20 V) IGSS Gate-to-Source Reverse Leakage [ … ]


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