IRFIZ24NPBF Datasheet PDF learn more.
Part number : IRFIZ24NPBF
Functions : This is a kind of semiconductor, Power MOSFET.
Pin arrangement :
Package information :
Manufacturer : International Rectifier
The texts in the PDF file :
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient G PD – 94808 IRFIZ24NPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω ID = 14A S TO-220 FULLPAK Max. 14 10 68 29 0.19 ± 20 71 10 2.9 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ––– Max. 5.2 65 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 11/3/03 IRFIZ24NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Paramete [ … ]
IRFIZ24NPBF PDF File