IRF523 – N-Channel MOSFET Transistor

IRF523 Datasheet PDF learn more.

Part number : IRF523

Functions : This is a kind of semiconductor, N-Channel MOSFET Transistor.

Pin arrangement :

Package information :

Manufacturer : Inchange Semiconductor

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IRF523 Datasheet PDF

The texts in the PDF file :

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF523 ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 80 ±20 V V ID Drain Current-Continuous 8A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 60 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF523 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 80 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID= 5.6A VGS= ±20V;VDS= 0 2 4V 0.36 Ω ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS=0 250 uA VSD Forward On-Voltage IS= 9.2A; VGS=0 2.5 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 350 pF 130 pF 25 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=50V,ID=9.2A VGS=10V,RGEN=18Ω RGS=18Ω Tf Fall Time MIN TYP MAX UNIT 9 13 ns 30 45 ns 18 29 ns 20 30 ns isc website:www.iscsemi.cn 2 isc & i [ … ]

IRF523 PDF File



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