HY27UF081G2A – 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

HY27UF081G2A Datasheet PDF learn more.

Part number : HY27UF081G2A

Functions : This is a kind of semiconductor, 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash.

Pin arrangement :

Package information :

Manufacturer : Hynix Semiconductor

Image :

HY27UF081G2A Datasheet PDF

The texts in the PDF file :

HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27UF081G2A HY27UF161G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.4 / Jun. 2007 1 www.DataSheet.in HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.01 Initial Draft. 1) Change NOP 2) Change AC Characteristics 0.1 Before After tOH 12 10 History Draft Date Dec. 28. 2005 Remark Preliminary May. 18. 2006 Preliminary 1) Delete Memory array map 2) Change AC Characteristics tCS tCEA 35 25 tREA 25 20 0.2 Before After 25 20 Oct. 02. 2006 Preliminary 3) Correct copy back function 1) Change 1Gb Package Type 0.3 – FBGA package is added – Figure & dimension are changed 2) Delet Preliminary 0.4 1) Correct figure 19 Jun. 11. 2007 Nov. 23. 2006 Rev 0.4 / Jun. 2007 2 www.DataSheet.in HY27UF(08/16)1G2A Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES – Cost effective solutions for mass storage applications NAND INTERFACE – x8 or x16 bus width. – Multiplexed Address/ Data – Pinout compatibility for all densities FAST BLOCK ERASE – Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE – 1st cycle: Manufacturer Code – 2nd cycle: Device Code SUPPLY VOLTAGE – VCC = 2.7 to 3.6V : HY27UFxx1G2A Memory Cell Array = (2K+64) Bytes x 64 Pages x 1,024 Blocks = (1K+32) Bytes x 64 Pages x 1,024 Blocks PAGE SIZE – x8 device : (2K+64 spare) Bytes : HY27UF081G2A – x16 device : (1K+32 spare) Bytes : HY27UF161G2A DATA RETENTION – 100,000 Program/Erase cycles (with 1bit/528byte ECC) – 10 years Data Retention PACKAGE – HY27UF(08/16)1G2A-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) – HY27UF(08/16)1G2A-T (Lead) – HY27UF(08/16)1G2A-TP (Lead Free) – HY27UF081G2A-S(P) : 48-Pin USOP1 (12 x 17 [ … ]

HY27UF081G2A PDF File



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