H6N03LAG Datasheet PDF learn more.

Part number : H6N03LAG

Functions : This is a kind of semiconductor, IPDH6N03LAG.

Pin arrangement :

Package information :

Manufacturer : Infineon Technologies

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H6N03LAG Datasheet PDF

The texts in the PDF file :

OptiMOS®2 Power-Transistor


• Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary V DS R DS(on),max (SMD version) ID 25 V 6 mΩ 50 A Type IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Package Marking PG-TO252-3-11 H6N03LA PG-TO252-3-23 H6N03LA PG-TO251-3-11 H6N03LA PG-TO251-3-1 H6N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current I D,pulse T C=25 °C3) Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 50 350 150 6 ±20 71 -55 … 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 1.3 page 1 2006-05-11 Datasheet pdf – http:/// IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction – case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) – – 2.1 K/W – 75 – 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=30 µA I DSS V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C I GSS [ … ]


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